2SD1616A(2005) Ver la hoja de datos (PDF) - Unisonic Technologies

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componentes Descripción

Fabricante

2SD1616A
(Rev.:2005)

NPN EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

2SD1616/A

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

2SD1616

60

2SD1616A

VCBO

120

V

2SD1616

50

Collector to Emitter Voltage

2SD1616A

VCEO

60

V

Emitter to Base Voltage

VEBO

6

V

Collector Current

DC

IC

1

A

Pulse(Note2)

ICM

2

A

Total Power Dissipation

PC

750

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width≤10ms, Duty cycle<50%

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)

PARAMETER

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base Emitter On Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Transition Frequency

Output Capacitance

Turn On Time

Storage Time

Fall Time

SYMBOL

TEST CONDITIONS

VCE (SAT) IC=1A, IB=50mA

VBE (SAT) IC=1A, IB=50mA

VBE (ON) VCE =2V, IC =50mA

ICBO VCB=60V

IEBO VEB= 6V

2SD1616

hFE1 VCE =2V, IC =100mA 2SD1616A

hFE2 VCE =2V, IC=1A

fT

VCE =2V, IC =100mA

Cob VCB =10V, f =1MHz

tON VCE =10V, IC =100mA

tSTG IB1 = -IB2 =10mA

tF

VBE(OFF) = -2 ~ -3V

MIN

600

135

135

81

100

TYP MAX UNIT

0.15 0.3 V

0.9 1.2 V

640 700 mV

100 nA

100 nA

600

400

160

MHz

19 pF

0.07

μs

0.95

μs

0.07

μs

CLASSIFICATION OF hFE1

RANK

hFE1

Y

135 ~ 270

G

200 ~ 400

L

300 ~ 600

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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