2SD1606 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SD1606

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SD1606

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

C to E diode forward current

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC * 1

Tj

Tstg

ID*1

Ratings

Unit

120

V

120

V

7

V

6

A

12

A

40

W

150

°C

–55 to +150

°C

6

A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO 120 —

voltage

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

Base to emitter saturation

voltage

C to E diode forward voltage

Turn on time

Storage time

Fall time

Note: 1. Pulse test.

I CBO

I CEO

hFE

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

VD

t on

t stg

tf

—

—

—

—

1000 —

—

—

—

—

—

—

—

—

—

—

—

0.6

—

7.0

—

2.0

Max Unit

—

V

—

V

100 µA

10

µA

20000

1.5 V

3.0 V

2.0 V

3.5 V

3.0 V

—

µs

—

µs

—

µs

Test conditions

IC = 25 mA, RBE = ∞

IE = 50 mA, IC = 0

VCB = 120 V, IE = 0

VCE = 100 V, RBE = ∞

VCE = 3 V, IC = 3 A*1

IC = 3 A, IB = 6 mA*1

IC = 6 A, IB = 60 mA*1

IC = 3 A, IB = 6 mA*1

IC = 6 A, IB = 60 mA*1

ID = 6 A*1

IC = 3 A, IB1 = –IB2 = 6 mA

2

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