2SD1411 Ver la hoja de datos (PDF) - SavantIC Semiconductor
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2SD1411 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1411
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.4A
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=1V
hFE-2
DC current gain
IC=4A ; VCE=1V
fT
Transition frequency
VCE=4V;IC=1A
COB
Collector output capacitance
f=1MHz ; VCB=10V;IE=0
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IB1=-IB2=0.3A
VCC=30V ,RL=10A
MIN TYP. MAX UNIT
80
V
0.25 0.5
V
0.9
1.4
V
5
µA
5
µA
70
240
30
10
MHz
250
pF
0.4
µs
2.5
µs
0.5
µs
hFE-1 Classifications
O
Y
70-140
120-240
2
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