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2SD1435 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza
componentes Descripción
Fabricante
2SD1435
Iscsemi
Inchange Semiconductor Iscsemi
2SD1435 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1435
DESCRIPTION
·With TO-3PN package
·DARLINGTON
·High DC current gain
·Complement to type 2SB1031
APPLICATIONS
·For low frequency power amplifier and
high current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-Peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
100
100
7
15
20
3
100
150
-55~150
UNIT
V
V
V
A
A
A
W

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