2SD1410 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SD1410 Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1410
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A ; L= 40mH
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 40mA
ICBO
Collector Cutoff Current
VCB= 300V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE -1
DC Current Gain
IC= 2A ; VCE= 2V
hFE -2
DC Current Gain
IC= 4A ; VCE= 2V
COB
Output Capacitance
Switching times
IE= 0 ; VCB= 10V; ftest=1MHz
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 4A , IB1= -IB2= 40mA
RL= 25Ω; VCC= 100V
MIN TYP. MAX UNIT
250
V
2.0
V
2.5
V
500 μA
500 μA
2000
200
35
pF
1.0
μs
8.0
μs
5.0
μs
isc Website：www.iscsemi.cn
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