2SD1137 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SD1137 Datasheet PDF : 5 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=∞
V(BR)EBO Emitter-base breakdown votage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1 A;IB=0.1 A
ICEO
Collector cut-off current
VCE=80V; RBE=∞
IEBO
Collector cut-off current
VEB=3.5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=4V
hFE-2
DC current gain
IC=50mA ; VCE=4V
Product Specification
2SD1137
MIN TYP. MAX UNIT
100
V
4
V
1.0
V
100
⎧Α
50
⎧Α
50
250
25
350
2
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