2SD1160 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SD1160 Datasheet PDF : 5 Pages
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IC – VCE
1.0
10
8
Common
emitter
0.8
Tc = 25°C
6
0.6
5
4
0.4
3
0.2
IB = 2 mA
0
0
0
2
4
6
8
10
12
14
Collector-emitter voltage VCE (V)
VCE (sat) – IC
1
Common emitter
0.5 IC/IB = 50
0.3
Tc = −25°C
25
100
0.1
0.05
0.03
30
100
300
1000
Collector current IC (mA)
3000
2SD1160
1000
500
300
100
50
30
hFE – IC
Common emitter
VCE = 2 V
Tc = 100°C
25
−25
10
10
30
100
300
1000
3000
Collector current IC (mA)
VBE (sat) – IC
10
Common emitter
5
IC/IB = 50
3
1
0.5
0.2
30
Tc = −25°C
25
100
100
300
1000
Collector current IC (mA)
3000
1000
500
300
IE – VECF
IB = 0
Tc = 100°C
25 −25
100
50
30
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Emitter-collector forward voltage VECF (V)
1000
rth – tw
Curves apply only to limited areas of thermal
resistance.
(Single nonrepetitive pulse)
Tc = 25°C
100
10
1
0.1
1 m 10 m 100 m
1
10
100 1000
Pulse width tw (s)
3
2006-11-21
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