2SD1160 Ver la hoja de datos (PDF) - Toshiba
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2SD1160 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD1160
Switching Applications
Suitable for Motor Drive Applications
2SD1160
Unit: mm
• High DC current gain
• Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA)
• Built-in free wheel diode
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
DC
Collector current
IC
2
A
Pulse
ICP
4
Diode forward surge current (t = 1 s)
IFP
1
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1
W
10
Junction temperature
Tj
150
°C
JEDEC
―
Storage temperature range
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7B1A
temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR
≈ 800 Ω
EMITTER
1
2006-11-21
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