2SC5804 Ver la hoja de datos (PDF) - Isahaya Electronics
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2SC5804 Datasheet PDF : 2 Pages
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PRELIMINARY
Notics:This is not a final specification.
Some parametric limits are subject to change.
〈SMALL-SIGNAL TRANSISTOR〉
2SC5804
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
2SC5804 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency application.
Since it is a super-thin flat lead type package,a high-density
mounting are possible.
Complementary with 2SC3052.
FEATURE
●Super-thin flat lead type package. t=0.45mm
●Excellent linearly of DC forward current gain.
●Low collector to emitter saturation voltage
VCE(sat)=0.3V max (@Ic=100mA/IB=10mA)
OUTLINE DRAWING
0.2
0.8 0.2
①
②
③
Unit：ｍｍ
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application.
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
JEITA：
VCBO
Collector to Base voltage
50
V
VCEO
Collector to Emitter voltage
6
V
VEBO
Emitter to Base voltage
50
V
IO
Collector current
200
mA
Pc
Collector dissipation
100
mW
Tj
Junction temperature
＋125
℃
Tstg
Storage temperature
-55〜＋125 ℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
Limits
Min Typ Max
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
NF
IC=100μA, R BE=∞
V CB=50V, I E=0mA
V EB=6V, I C=0mA
V CE=6V, I C=1mA
V CE=6V, I C=0.1mA
IC=100mA, I B=10mA
V CE=6V, I E=-10mA
V CB=6V, I E=0mA,f=1MHz
V CE=6V, I E=-0.1mA,f=1kHz,RG=2kΩ
50
――
V
-
- 0.1
μA
-
- 0.1
μA
150
※
800
-
90
-
-
-
-
-
0.3
v
-
200
-
MHz
-
2.5
-
pF
-
-
15
dB
※ It shows hFE classification in below table.
Item
hFE
Abbrivation
E
150〜300
LE
F
250〜500
LF
G
400〜800
LG
ISAHAYA ELECTRONICS CORPORATION
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