2SC5890 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SC5890

Silicon NPN Epitaxial UHF / VHF wide band amplifier

Renesas Electronics 

2SC5890

S11 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5

–.2

–.4

–.6

–.8 –1

–10

–5

–4

–3

–2

–1.5

Condition: VCE = 5 V, ZO = 50 Ω

100 to 2000 MHz (100 MHz Step)

(IC = 10 mA)

(IC = 30 mA)

(IC = 50 mA)

S21 Parameter vs. Frequency

90˚

Scale: 8.0 / div.

120˚

60˚

150˚

30˚

180˚

0˚

–150˚

–30˚

–120˚

–90˚

–60˚

Condition: VCE = 5 V, ZO = 50 Ω

100 to 2000 MHz (100 MHz Step)

(IC = 10 mA)

(IC = 30 mA)

(IC = 50 mA)

S12 Parameter vs. Frequency

90˚

Scale: 0.08 / div.

120˚

60˚

150˚

30˚

180˚

0˚

–150˚

–30˚

–120˚

–90˚

–60˚

Condition: VCE = 5 V, ZO = 50 Ω

100 to 2000 MHz (100 MHz Step)

(IC = 10 mA)

(IC = 30 mA)

(IC = 50 mA)

S22 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5

–.2

–.4

–.6

–.8 –1

–10

–5

–4

–3

–2

–1.5

Condition: VCE = 5 V, ZO = 50 Ω

100 to 2000 MHz (100 MHz Step)

(IC = 10 mA)

(IC = 30 mA)

(IC = 50 mA)

Rev.0, Aug. 2002, page 6 of 14

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