2SC5812 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SC5812

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Renesas Electronics 

2SC5812

S11 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5

–10

–.2

–.4

–.6

–.8 –1

–5

–4

–3

–2

–1.5

Test conditions: VCE = 1 V , ZO = 50 Ω

100 to 2000 MHz (100 MHz step)

(IC = 5 mA)

(IC = 20 mA)

S21 Parameter vs. Frequency

90°

Scale: 8 / div.

120°

60°

150°

30°

180°

0°

–150°

–30°

–120°

–90°

–60°

Test conditions: VCE = 1 V , ZO = 50 Ω

100 to 2000 MHz (100 MHz step)

(IC = 5 mA)

(IC = 20 mA)

S12 Parameter vs. Frequency

90°

Scale: 0.04 / div.

120°

60°

150°

30°

180°

0°

–150°

–30°

–120°

–90°

–60°

Test conditions: VCE = 1 V , ZO = 50 Ω

100 to 2000 MHz (100 MHz step)

(IC = 5 mA)

(IC = 20 mA)

S22 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5

–10

–.2

–.4

–.6

–.8 –1

–5

–4

–3

–2

–1.5

Test conditions: VCE = 1 V , ZO = 50 Ω

100 to 2000 MHz (100 MHz step)

(IC = 5 mA)

(IC = 20 mA)

Rev.1.00 Aug 10, 2005 page 5 of 8

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