2SC5935 Ver la hoja de datos (PDF) - Panasonic Corporation
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Fabricante
2SC5935 Datasheet PDF : 3 Pages
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Power Transistors
2SC5935
Silicon NPN triple diffusion planar type
For power amplification
For TV vertical deflection output
■ Features
• Satisfactory linearity of forward current transfer ratio hFE
• Dielectric breakdown voltage of the package: 5 kV
• Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
200
V
Collector-emitter voltage (Base open) VCEO
180
V
Emitter-base voltage (Collector open) VEBO
6
V
Collector current
IC
2
A
Peak collector current
ICP
3
A
Collector power
PC
25
W
dissipation
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
VCBO
VCEO
VEBO
VBE
ICBO
IEBO
hFE1 *
hFE2
VCE(sat)
fT
IC = 50 µA, IE = 0
IC = 5 mA, IB = 0
IE = 500 µA, IC = 0
VCE = 10 V, IC = 400 mA
VCB = 200 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 400 mA
IC = 500 mA, IB = 50 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
200
V
180
V
6
V
1
V
50
µA
50
µA
60
240
50
1
V
20
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
60 to 140 100 to 240
Publication date: July 2004
SJD00318AED
1
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