2SC5725 Ver la hoja de datos (PDF) - Panasonic Corporation
Número de pieza
componentes Descripción
Fabricante
2SC5725 Datasheet PDF : 2 Pages
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Transistors
2SC5725
Silicon NPN epitaxial planar type
For DC-DC converter
Unit: mm
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Mini type package, allowing downsizing of the equipment and
0.40+–00..0150
3
0.16+–00..0160
automatic insertion through the tape packing
1
2
(0.95) (0.95)
1.9±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.90+–00..0250
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
20
V
c e. d ty Collector-emitter voltage (Base open) VCEO
15
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
5
V
a e cle con Collector current
IC
2
A
lifecy , dis Peak collector current
ICP
6
A
n u duct typed Collector power dissipation *
PC
600
mW
te tin Pro ed Junction temperature
Tj
150
°C
ur tinu Storage temperature
Tstg −55 to +150 °C
ing fo iscon Note) *: Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm
Marking Symbol: 3C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
in n es follopwlaned d ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min Typ Max Unit
c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
20
V
tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
15
V
M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
0.1
µA
D anc typ Forward current transfer ratio *
hFE1 VCE = 2 V, IC = 100 mA
200
800
inten ance hFE2 VCE = 2 V, IC = 1.5 A
120
Ma inten Collector-emitter saturation voltage * VCE(sat) IC = 0.5 A, IB = 25 mA
40 100 mV
ma IC = 1.5 A, IB = 30 mA
130 280
ned Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
280
MHz
(pla Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
15 25
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: January 2003
SJC00188CED
1
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