2SC5386 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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2SC5386

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

Product Specification

2SC5386

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A

VBEsat Base-emitter saturation voltage

IC=6A; IB=1.5A

ICBO

Collector cut-off current

VCB=1500V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=6A ; VCE=5V

Cob

Collector output capacitance

IE=0 ; VCB=10V,f=1MHz

fT

Transition frequency

IE=0.1A ; VCE=10V

Switching times

ts

Storage time

tf

Fall time

ICP=5A;IB1(end)=1.0A

fH =64kHz

MIN TYP. MAX UNIT

600

V

3.0

V

1.5

V

1.0

mA

10

μA

15

35

4.3

7.5

105

pF

1.7

MHz

2.5

3.5

μs

0.15

0.3

μs

2

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