2SC5387 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

2SC5387

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC5387

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0

600

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 8A; IB=B 2A

ICBO

Collector Cutoff Current

VCB= 1200V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

3.0

V

1.5

V

1

mA

10 μA

hFE-1

DC Current Gain

IC= 1A ; VCE= 5V

15

35

hFE-2

DC Current Gain

IC= 8A ; VCE= 5V

4.3

7.8

fT

Current-Gain—Bandwidth Product

IC= 0.1A ; VCE= 10V

1.7

MHz

COB

Output Capacitance

tstg

Storage Time

tf

Fall Time

IE= 0 ; VCB= 10V; ftest= 1.0MHz

ICP= 6A , IB1(end)= 1.2A;fH= 64kHz

130

pF

2.5 3.5 μs

0.15 0.3 μs

isc Website：www.iscsemi.cn

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