2SC5387 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SC5387 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5387
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1200V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Horizontal deflection output for high resolution display,
color TV.
·High speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
10
A
ICM
Collector Current- Pulse
20
A
IBB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
5
A
50
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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