2SC5386 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

2SC5386

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC5386

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

600

V

VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A

3.0

V

VBEsat Base-emitter saturation voltage

IC=6A; IB=1.5A

1.5

V

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

VCB=1500V; IE=0

VEB=5V; IC=0

1.0

mA

10

μA

hFE-1

DC current gain

IC=1A ; VCE=5V

15

35

hFE-2

DC current gain

IC=6A ; VCE=5V

4.3

7.5

Cob

Collector output capacitance

固IN电C半H导AN体GE SEMICONDUTOR fT

Transition frequency

Switching times

ts

Storage time

IE=0 ; VCB=10V,f=1MHz

IE=0.1A ; VCE=10V

ICP=5A;IB1(end)=1.0A

fH =64kHz

105

1.7

2.5

3.5

pF

MHz

μs

tf

Fall time

0.15

0.3

μs

2

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