2SC5633 Ver la hoja de datos (PDF) - Isahaya Electronics
Número de pieza
componentes Descripción
Fabricante
2SC5633 Datasheet PDF : 2 Pages
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PRELIMINARY
Notics:This is not a final specification.
Some parametric limits are subject to change.
DESCRIPTION
2SC5633 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for high voltage application.
〈SMALL-SIGNAL TRANSISTOR〉
2SC5633
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
Unit：ｍｍ
ｈFE rank
4.4±0.1
1.6±0.1
Lot No.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=0.5V max
●Super mini package for easy mounting
APPLICATION
For Hybrid IC, DC-DC converter
φ1
2.5±0.1
0.8MIN
Abbreviation
For kind
1.5±0.1
1.5±0.1
0.4±0 0. 7 0.5±0 0. 7
0.4±0 0. 7
0 1. MAX
JEITA：SC-62
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
VCBO Collector to Base voltage
300
V
VCEO
Collector to Emitter voltage
300
V
VEBO
Emitter to Base voltage
7
V
IO
Collector current
100
mA
Pc
Collector dissipation
500
mW
Tj
Junction temperature
＋150
℃
Tstg
Storage temperature
-55〜＋150 ℃
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
V(BR)CBO
V(BR) EBO
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
I C=50μA ,I E=0
I E=50μA ,I C=0
I C=1mA ,R BE=∞
V CB=-300V, I E=0mA
V EB=5V, I C=0mA
V CE=10V, I C=10mA
I C=100mA ,IB=10mA
V CE=6V, I E=-10mA
V CB=6V, I E=0,f=1MHz
Limits
Unit
Min Typ Max
300
-
- V
7
-
- V
300
-
- V
-
-
0.5 μA
-
-
0.5 μA
60
-
305
-
-
0.5
V
-
40
-
MHz
-
3.0
-
pF
ISAHAYA ELECTRONICS CORPORATION
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