2SC5626 Ver la hoja de datos (PDF) - Isahaya Electronics
Número de pieza
componentes Descripción
Fabricante
2SC5626
Isahaya Electronics
2SC5626 Datasheet PDF : 4 Pages
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〈T ra n si sto r〉
2SC5626
For High Frequency Amplify Application
Silicon NPN Epitaxial Type (Super Mini type)
DESCURIPT ION
Mitsubishi 2SC5626 is a super mini packege resin sealed
silicon NPN epitaxial ty pe transistor. It is designed f or high
f requency amplif y application.
FEAT URE
・Super mini package f or easy mounting
・High gain band width product
APPLICAT ION
Small ty pe machine high f requency amplif y
application
OUTLINE DRAWING
2.1
0.425 1.25 0.425
Unit:mm
1.30
0.65 1
2.0
0.65
2
0.3
3
0.9 0.7
0.15
0～0.1
TERMINAL CONNECTOR
1 : BASE
2 : EMITTER
JEITA : SC-70
3 : COLLECTOR JEDEC : -
MAXIMUM RATINGS (Ta=25℃)
SY MBOL
PARAMETER
VCBO
VEBO
VCEO
IC
PC
Tj
Tstg
Collector to Base v oltage
Emitter to Base v oltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temprature
RATINGS
30
4
20
50
150
+150
-55to+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
UNIT
V
V
V
mA
mW
℃
℃
SY MBOL
PARAMETER
TEST CONDITIONS
V(BR)CBO C to B break down v oltage
V(BR)CEO C to E break down v oltage
V(BR)EBO E to B break down v oltage
I CBO Collector cut cf f current
I EBO Emitter cut of f current
hFE
DC f orward current gain
VCE(sat) C to E Saturation v oltage
fT
Gain band width product
Cob
Collector output capacitance
I C=50μ A, I E=0mA
I C=100μ A, RBE=∞
I C=50μ A, I C=0mA
VCB=20V, I E=0
VEB=3V, I C=0
VCE=10V, I C=5mA
I C=10mA, I B=1mA
VCE=5V, I E=-10mA
VCB=6V, I E=0, f =1MHz
MARKING
SW
TYPE NAME
LIMITS
MIN
TY P
30
20
4
50
148
0.1
600
1100
1.2
MAX
0.5
0.5
0.3
1.5
UNIT
V
V
V
μA
μA
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
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