DESCRIPTION
2SC5625 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=0.5V max
●Super mini package for easy mounting
〈SMALL-SIGNAL TRANSISTOR〉
2SC5625
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(mini type)
OUTLINE DRAWING
2.5
0.5
1.5 0.5
Unit:mm
①
②
③
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITA:SC-59
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
Ratings
Unit
VCBO
Collector to Base voltage
300
V
VCEO
Collector to Emitter voltage
300
V
VEBO
Emitter to Base voltage
7
V
IO
Collector current
100
mA
Pc
Collector dissipation
150
mW
Tj
Junction temperature
+125
℃
Tstg
Storage temperature
-55〜+125 ℃
TERMINAL CONNECTER
①:BASE
②:EMITTER
③:COLLECTOR
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
Test conditions
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
I C=50μA ,I E=0
I C=50μA ,I C=0
I C=1mA ,R BE=∞
V CB=300V, I E=0mA
V EB=5V, I C=0mA
V CE=10V, I C=10mA ※1
I C=100mA ,IB=10mA
V CE=6V, I E=-10mA
V CB=6V, I E=0mA,f=1MHz
Min
300
7
300
-
-
60
-
-
-
Limits
Typ
-
-
-
-
-
-
-
40
3.0
Max
-
-
-
0.5
0.5
305
0.5
-
-
Unit
V
V
V
μA
μA
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION