2SC5383 Ver la hoja de datos (PDF) - Isahaya Electronics
Número de pieza
componentes Descripción
Fabricante
2SC5383
Isahaya Electronics
2SC5383 Datasheet PDF : 4 Pages
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DESCRIPTION
2SC5383 is a ultra super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
〈SMALL-SIGNAL TRANSISTOR〉
2SC5383
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
OUTLINE DRAWING
Unit：ｍｍ
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=0.3V max（@Ic=100mA,IB=10mA）
●Excellent linearity of DC forward gain.
●Ultra super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
VCBO Collector to Base voltage
50
V
VCEO Collector to Emitter voltage
50
V
VEBO
Emitter to Base voltage
6
V
IO
Collector current
200
mA
Pc
Collector dissipation
150
mW
Tj
Junction temperature
＋150
℃
Tstg
Storage temperature
-55〜＋150 ℃
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-75A
JEDEC：-
MARKING
LF
Type name
hFE Item
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain ※
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
NF
I C=100μA ,R BE=∞
V CB=50V, I E=0mA
V EB=6V, I C=0mA
V CE=6V, I C=1mA
V CE=6V, I C=0.1mA
I C=100mA ,IB=10mA
V CE=6V, I E=-10mA
V CB=6V, I E=0,f=1MHz
V CE=6V, I E=-0.1mA,f=1kHz,RG=2kΩ
※） It shows hFE classification at right table.
Limits
Unit
Min Typ Max
50
-
-
V
-
-
0.1 μA
-
-
0.1 μA
150
-
500
90
-
-
-
-
0.3
V
-
200
-
MHz
-
2.5
-
pF
-
-
15
dB
Item
hFE Item
E
150〜300
F
250〜500
ISAHAYA ELECTRONICS CORPORATION
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