C5549 Ver la hoja de datos (PDF) - Toshiba
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C5549 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5549
High-Speed Switching Application for Inverter Lighting
System
2SC5549
Unit: mm
• Suitable for RCC circuits. (guaranteed small current hFE)
: hFE = 13 (min) (IC = 1 mA)
• High speed: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.24 A)
• High breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
400
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
DC
Collector current
IC
1
A
Pulse
ICP
2
Base current
IB
0.5
A
JEDEC
TO-92MOD
Collector power dissipation
Junction temperature
Storage temperature range
PC
0.9
W
Tj
150
°C
Tstg
−55 to 150
°C
JEITA
TOSHIBA
SC-65
2-5J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10
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