DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SC5387 Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
Fabricante
2SC5387 Datasheet PDF : 5 Pages
1 2 3 4 5
2SC5387
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5387
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
Unit: mm
l High Voltage
: VCBO = 1500 V
l Low Saturation Voltage : VCE (sat) = 3 V (Max.)
l High Speed
: tf = 0.15 µs (Typ.)
l Collector Metal (Fin) is Fully Covered with Mold Resin.
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
1500
600
5
10
20
5
50
150
55~150
UNIT
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cutoff Current
Emitter Cutoff Current
EmitterBase Breakdown Voltage
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Switching Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
tstg
tf
VCB = 1500 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 8 A
IC = 8 A, IB = 2 A
IC = 8 A, IB = 2 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 6 A, IB1 (end) = 1.2 A
fH = 64 kHz
MIN TYP. MAX UNIT
1
mA
10
µA
600
V
15
35
4.3
7.8
3
V
1.5
V
1.7
MHz
130
pF
2.5 3.5
µs
0.15 0.3
1
2001-08-21

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]