UTC2SC5305 Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

UTC2SC5305

NPN EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

UTC 2SC5305

NPN EPITAXIAL SILICON TRANSISTOR

ELECTRICAL CHARACTERISTICS

(TC=25℃, unless otherwise noted.)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage

BVCBO IC = 1mA, IE = 0

Collector-Emitter Breakdown Voltage BVCEO IC = 5mA, IB = 0

Emitter Cut-off Current

BVEBO IE=1mA, IC=0

Collector Cut-off Current

ICBO VCB=500V, IE=0

Emitter Cut-off Current

IEBO VEB = 9V, IC = 0

DC Current Gain

hFE1

hFE2

VCE=1V, IC=0.8A

VCE=1V,IC=2A

Collector-Emitter Saturation Voltage

VCE (sat)

IC=0.8A, IB=0.08A

IC=2A, IB=0.4A

Base-Emitter Saturation Voltage

VBE (sat)

IC=0.8A, IB=0.08A

IC=2A, IB=0.4A

Output Capacitance

Cob VCB = 10V, f=1MHz

Turn ON Time

tON VCC=300V, IC =2A

Storage Time

tSTG IB1 = 0.4A, IB2=-1A

Fall Time

tF

RL = 150Ω

Storage Time

tSTG VCC=15V,VZ=300V

Fall Time

tF

IC = 2A,IB1 = 0.4A

IB2 = -0.4A, LC=200µH

Diode Forward Voltage

VF

IF = 1A

IF = 2A

Reverse recovery time*

(di/dt =10A/µs)

IF = 0.4A

trr

IF = 1A

IF = 2A

*Pulse Test : Pulse Width=5mS, Duty cycles≦10%

MIN TYP MAX UNIT

800

V

400

V

12

V

10 µA

10 µA

22

8

0.4

0.5

V

1.0

1.0

V

75 pF

150 ns

2

µs

0.2 µs

2.25 µs

150 ns

1.5

V

1.6

800

ns

1.4

µs

1.9

µs

Static Characteristic

5

IB = 500mA

IB = 450mA

IB = 400mA

4

IB = 350mA

IB = 300mA

IB = 250mA

IB = 200mA

3

IB = 150mA

IB = 100mA

2

IB = 50mA

1

IB = 0

0

0 1 2 3 4 5 6 7 8 9 10

COLLECTOR-EMITTER VOLTAGE, V CE (V)

DC current Gain

100

Ta = 125℃

VCE = 1V

25℃

-25℃

10

1

0.01

0.1

1

10

COLLECTOR CURRENT, I C (A)

UTC UNISONIC TECHNOLOGIES CO., LTD.

www.unisonic.com.tw

2

QW-R203-028,A

Share Link: