UTC2SC5305 Ver la hoja de datos (PDF) - Unisonic Technologies
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UTC2SC5305 Datasheet PDF : 4 Pages
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UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER
SWITCHING TRANSISTOR
FEATURES
* High hFE for Low base drive requirement
* Suitable for half bridge light ballast Applications
* Built-in Free-wheeling Diode makes it specially
suitable for light ballast Applications
* Well controlled storage-time spread for all range of hFE
1
TO-220
ABSOLUTE MAXIMUM RATINGS
(TC=25℃, unless otherwise noted.)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)*
Base Current (DC)
Base Current (Pulse)*
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
Tj
Tstg
THERMAL CHARACTERISTICS
(TC=25℃, unless otherwise noted.)
PARAMETER
Thermal Resistance
Junction to Case
Junction to Ambient
SYMBOL
RθJC
RθJA
1: Base 2: Collector 3: Emitter
*Pb-free plating product number: 2SC5305L
RATINGS
800
400
12
5
10
2
4
75
150
-65 ~ 150
UNIT
V
V
V
A
A
A
A
W
℃
℃
RATINGS
1.65
62.5
UNIT
℃/W
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
1
QW-R203-028,A
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