2SC5237 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SC5237

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC5237

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Symbol

VCBO

VCEO

VEBO

IC

IC(peak)

PC

Junction temperature

Tj

Storage temperature

Tstg

Note: 1. TC = 25°C

Ratings

250

250

3

150

300

1.4

8*1

150

–55 to +150

Unit

V

V

V

mA

mA

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector to base breakdown V(BR)CBO 250

—

—

V

voltage

IC = 10 µA, IE = 0

Collector to emitter breakdown V(BR)CEO 250

—

—

V

voltage

IC = 1 mA, RBE = ∞

Collector cutoff current

ICBO

—

—

1.0 µA

VCB = 200 V, IE = 0

Emitter cutoff current

IEBO

—

—

10

µA

VEB = 3 V, IC = 0

DC current transfer ratio

hFE*1

60

—

200 —

VCE = 10 V, IC = 10 mA

Base to emitter voltage

VBE

—

—

1.0 V

VCE = 10 V, IC = 50 mA

Collector to emitter saturation VCE(sat)

—

—

1.0 V

voltage

IC = 50 mA, IB = 5 mA

Gain bandwidth product

fT

300 400 —

MHz VCE = 30 V, IC = 50 mA

Collector output capacitance Cob

—

3.5 5.0 pF

VCB = 30 V, IE = 0, f = 1 MHz

Note: 1. The 2SC2537 is grouped by hFE and its specification is as follows.

B

60 to 120

C

100 to 200

2

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