2SC5233 Ver la hoja de datos (PDF) - Toshiba
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2SC5233 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5233
General Purpose Amplifier Applications
Switching and Muting Switch Application
2SC5233
Unit: mm
• Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
• Large collector current: IC = 500 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
50
mA
Collector power dissipation
Junction temperature
Storage temperature range
PC
100
mW
Tj
125
°C
Tstg
−55 to 125
°C
JEDEC
JEITA
―
SC-70
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2E1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.006 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1994-03
1
2014-03-01
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