2SC5199 Ver la hoja de datos (PDF) - Toshiba
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2SC5199 Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5199
Power Amplifier Applications
2SC5199
Unit: mm
• High breakdown voltage: VCEO = 160 V (min)
• Complementary to 2SA1942
• Suitable for use in 80-W high fidelity audio amplifier’s output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
VCBO
VCEO
VEBO
IC
IB
PC
160
V
160
V
5
V
12
A
1.2
A
120
W
Junction temperature
Storage temperature range
Tj
150
°C
JEDEC
―
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-21F1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 9.75 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10
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