2SC5048 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SC5048

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC5048

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

600

V

VCEsat Collector-emitter saturation voltage IC=8A; IB=2A

3

V

VBEsat Base-emitter saturation voltage

IC=8A; IB=2A

1.0

1.4

V

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

VCB=1500V; IE=0

VEB=5V; IC=0

1

mA

10

μA

hFE-1

DC current gain

IC=1A ; VCE=5V

10

30

hFE-2

DC current gain

IC=8A ; VCE=5V

4

8

Cob

Collector output capacitance

IE=0 ; VCB=10V,f=1MHz

160

pF

固IN电C半H导AN体GE SEMICONDUTOR fT

Transition frequency

Switching times (inductive load)

ts

Storage time

tf

Fall time

IE=0.1A ; VCE=10V

ICP=6A;IB1(end) =1.15A

fH=64kHz

1.7

2.5

4

0.15 0.3

MHz

μs

μs

2

Share Link: