C5003 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

C5003

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Base-emitter breakdown voltage

IEB=300mA; IB=0

VCEsat Collector-emitter saturation voltage IC=5A;IB=1.2A

VBEsat Base-emitter saturation voltage

IC=5A;IB=1.2A

ICBO1

ICBO2

ICEO

Collector cut-off current

Collector cut-off current

Collector cut-off current

VCB=1200V; IE=0

VCB=1500V; IE=0

VCE=800V; IE=0

IEBO

Emitter cut-off current

VEB=6V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=5A ; VCE=5V

VFEC

fT

COB

Forward voltage

Transition frequency

Output capacitance

IEC=7A

IE=-0.5A ; VCE=12V

VCB=10V;f=1MHz

Switching times

tstg

Storage time

tf

Fall time

IC=4A;IB1=0.8A;

IB2=-1.6A;RL=50Ω

VCC=200V

Product Specification

2SC5003

MIN TYP. MAX UNIT

6

V

5

V

1.5

V

100 μA

1

mA

1

mA

100 μA

8

4

9

2.0

V

4

MHz

100

pF

4.0 μs

0.2 μs

2

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