C5027E-O Ver la hoja de datos (PDF) - Unisonic Technologies
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C5027E-O Datasheet PDF : 4 Pages
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2SC5027E
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Tc = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
750
V
Collector-Emitter Voltage
VCEO
700
V
Collector-Emitter Voltage
VEBO
7
V
Peak Collector Current
IC
3
A
Collector Current (Pulse)
ICP
10
A
Base Current
IB
1.5
A
Power Dissipation
Junction Temperature
Storage Temperature
PD
50
W
TJ
150
℃
TSTG
-40 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
SYMBOL
BVCBO
BVCEO
BVEBO
VCEO(SUS)
ICBO
IEBO
hFE1
hFE 2
VCE (SAT)
VBE (SAT)
Cob
fT
tON
tS
tF
TEST CONDITIONS
IC=1mA, IE=0
IC=5mA, IB=0
IE=1mA, IC=0
IC=1.5A, IB1= -IB2=0.3A
L=2mH, Clamped
VCB=750V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.2A
VCE=5V, IC=1A
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
VCB=10V, f=1MHz, IE=0
VCE=10V, IC=0.2A
VCC=400V
IC=5IB1= -2.5IB2=2A
RL=200Ω
CLASSIFICATION of hFE1
CLASSIFICATION
RANGE
N
10 ~ 20
R
15 ~ 30
MIN TYP MAX UNIT
750
V
700
V
7
V
700
V
10 μA
10 μA
10
40
8
2
V
1.5 V
60
pF
15
MHz
0.5 μs
3 μs
0.3 μs
O
20 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R203-030,B
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