2SC5090(2003) Ver la hoja de datos (PDF) - Toshiba
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2SC5090 Datasheet PDF : 7 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5090
2SC5090
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain.
· NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
Rating
Unit
20
V
10
V
1.5
V
20
mA
40
mA
100
mW
125
°C
-55~125
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA, f = 1 GHz
VCE = 8 V, IC = 20 mA, f = 2 GHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 2 GHz
Min Typ. Max Unit
7
10
¾ GHz
10
13
¾
dB
¾
7
¾
¾
1.1 2.5
dB
¾
1.7
¾
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
¾
IEBO
VEB = 1 V, IC = 0
¾
hFE
(Note 1)
VCE = 8 V, IC = 20 mA
50
Cob
¾
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Cre
¾
¾
1
mA
¾
1
mA
¾
160
0.7
¾
pF
0.5 0.95 pF
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1
2003-03-19
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