2SC5065(2003) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SC5065 Datasheet PDF : 8 Pages
| |||
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5065
2SC5065
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain.
· NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
Rating
Unit
20
V
12
V
3
V
15
mA
30
mA
100
mW
125
°C
-55~125
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-3E1A
Weight: 0.006 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA, f = 500 MHz
VCE = 5 V, IC = 10 mA, f = 1 GHz
VCE = 5 V, IC = 3 mA, f = 500 MHz
VCE = 5 V, IC = 3 mA, f = 1 GHz
Min Typ. Max Unit
5
7
¾ GHz
¾
17
¾
dB
8.5
12
¾
¾
1
¾
dB
¾
1.1 2.0
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
¾
¾
1
mA
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 5 V, IC = 10 mA
¾
¾
1
mA
80
¾
240
Cob
¾
0.7
¾
VCB = 5 V, IE = 0, f = 1 MHz (Note 2)
pF
Cre
¾ 0.45 0.9
pF
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1
2003-03-19
Share Link: 