2SC4738G Ver la hoja de datos (PDF) - Toshiba
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2SC4738G Datasheet PDF : 3 Pages
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2SC4738
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738
Audio Frequency General Purpose Amplifier Applications
• High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
• Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
• High hFE: hFE = 120~700
• Complementary to 2SA1832
• Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
−55~125
°C
JEDEC
―
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-2H1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 2.4 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 60 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 2 mA
VCE (sat)
fT
Cob
IC = 100 mA, IB = 10 mA
VCE = 10 V, IC = 1 mA
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
120
⎯
700
⎯
0.1 0.25
V
80
⎯
⎯ MHz
⎯
2.0
3.5
pF
Note: hFE classification Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700
( ) marking symbol
Marking
1
2007-11-01
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