2SC4460 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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2SC4460

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

Silicon NPN Power Transistors

www.jmnic.com

2SC4460

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=1mA; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=∞

V(BR)EBO Emitter-base breakdown voltage

VCEX(sus) Collector-emitter sustain voltage

VCEsat Collector-emitter saturation voltage

IE=1mA; IC=0

IC=5A;IB1=2A;

IB2=-2A;L=500μH

IC=6A;IB=1.2 A

VBEsat Base-emitter saturation voltage

IC=6A;IB=1.2A

ICBO

Collector cut-off current

VCB=500V IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=1.2A ; VCE=5V

hFE-2

DC current gain

IC=6A ; VCE=5V

fT

Transition frequency

IC=1.6A ; VCE=10V

COB

Output capacitance

VCB=10V;f=1MHz

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=5IB1=-2.5IB2=7A;

RL=28.6Ω

VCC=200V

hFE-1 classifications

L

M

15-30

20-40

N

30-50

MIN

TYP.

MAX UNIT

800

V

500

V

7

V

500

V

1.0

V

1.5

V

10

μA

10

μA

15

50

8

20

MHz

160

pF

0.5

μs

3.0

μs

0.3

μs

JMnic

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