2SC4428 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

2SC4428

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC4428

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞

800

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

1100

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA; IC=0

7

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.6A

2.0

V

VBE(sat) Base-Emitter Saturation Voltage

ICBO

Collector Cutoff Current

IC= 3A; IB=B 0.6A

VCB= 800V; IE= 0

1.5

V

10

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

10

μA

hFE-1

DC Current Gain

IC= 0.4A; VCE= 5V

10

40

hFE-2

DC Current Gain

IC= 2A; VCE= 5V

8

COB

Output Capacitance

IE= 0; VCB= 10V; ftest=1.0MHz

120

pF

fT

Current-Gain—Bandwidth Product

IC= 0.4A; VCE= 10V

15

MHz

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= 4A; IB1= 0.8A; IB2= -1.6A;

RL= 100Ω; VCC= 400V

0.5 μs

3.0 μs

0.3 μs

‹ hFE-1 Classifications

K

L

M

10-20 15-30 20-40

isc Website：www.iscsemi.cn

2

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