2SC4250 Ver la hoja de datos (PDF) - Toshiba
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2SC4250 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4250
2SC4250
TV VHF Mixer Applications
Unit: mm
• High conversion gain: Gce = 25dB (typ.)
• Low reverse transfer capacitance: Cre = 0.45 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
3
V
Collector current
IC
50
mA
Base current
IB
25
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
JEITA
―
SC-70
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Reverse transfer capacitance
Transition frequency
Conversion gain
Noise figure
Symbol
Test Condition
Min
ICBO
VCB = 25 V, IE = 0
⎯
IEBO
VEB = 3 V, IC = 0
⎯
V (BR) CEO IC = 1 mA, IB = 0
20
hFE
VCE = 10 V, IC = 5 mA
40
Cre
VCB = 10 V, IE = 0, f = 1 MHz
⎯
fT
VCE = 10 V, IC = 5 mA
900
Gce
VCC = 12 V, f = 200 MHz, fL = 260 MHz 20
NF
(Figure 1)
⎯
Typ. Max Unit
⎯
⎯
⎯
150
0.45
1400
25
4.3
100
1000
⎯
300
0.6
⎯
⎯
6
nA
nA
V
pF
MHz
dB
dB
1
2007-11-01
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