2SC4203 Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Fabricante

2SC4203

Silicon Epitaxial Planar Type Transistor

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE (1)

hFE (2)

VCE (sat)

VBE (sat)

fT

Cob

VCB = 150 V, IE = 0

VEB = 5 V, IC = 0

IC = 1 mA, IB = 0

VCE = 10 V, IC = 50 mA

VCE = 10 V, IC = 200 mA

IC = 200 mA, IB = 20 mA

IC = 200 mA, IB = 20 mA

VCE = 10 V, IC = 70 mA

VCB = 30 V, f = 1 MHz, IE = 0

Marking

2SC4203

Min Typ. Max Unit

―

―

10

µA

―

―

10

µA

150

―

―

V

40

―

240

20

―

―

―

―

2.0

V

―

―

1.5

V

300 400

―

MHz

―

4.0 5.0

pF

C4203

Product No.

Lot No.

Explanation of Lot No.

Month of manufacture: January to December are denoted by letters A to L respectively.

Year of manufacture: last decimal digit of the year of manufacture

2

2002-07-23

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