2SC4212 Ver la hoja de datos (PDF) - Panasonic Corporation
Número de pieza
componentes Descripción
Fabricante
2SC4212 Datasheet PDF : 3 Pages
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Power Transistors
2SC4212
Silicon NPN triple diffusion planar type
For color TV horizontal deflection driver
■ Features
• High collector-emitter voltage (Base open) VCEO
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
8.0+–00..15
φ 3.16±0.1
Unit: mm
3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
350
V
Collector-emitter voltage (Base open) VCEO
300
V
Emitter-base voltage (Collector open) VEBO
7.5
V
Collector current
IC
200
mA
Peak collector current
ICP
400
mA
Collector power
PC
1.2
W
dissipation
5.0 *
Junction temperature
Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
Note) *: With a 100 × 100 × 2 mm Al heat sink
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 0
350
V
Collector-emitter voltage (Base open) VCEO IC = 5 mA, IB = 0
300
V
Emitter-base voltage (Collector open) VEBO IE = 100 µA, IC = 0
7.5
V
Collector-base cutoff current (Emitter open) ICBO VCB = 200 V, IE = 0
2
µA
Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0
2
µA
Forward current transfer ratio
hFE VCE = 10 V, IC = 10 mA
40
250
Collector-emitter saturation voltage
VCE(sat) IC = 50 mA, IB = 5 mA
1
V
Transition frequency
fT
VCB = 30 V, IE = −10 mA, f = 200 MHz 50
80
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 50 V, IE = 0, f = 1 MHz
4.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00127BED
1
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