2SC3834 Ver la hoja de datos (PDF) - Tiger Electronic
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2SC3834 Datasheet PDF : 1 Pages
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TIGER ELECTRONIC CO.,LTD
Product specification
Silicon NPN Triple Diffused Planar Transistor
2SC3834
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
200
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
120 V
8.0 V
7.0 A
3.0 A
50 W
150 oC
-55~150 oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
ICBO VCB=200V, IE=0
Emitter Cut-off Current
IEBO VEB=8V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
IC=50mA, IB=0
VCE=4V, IC=0.3A
VCE=4V, IC=3.0A
IC=3.0A,IB=300mA
IC=3.0A,IB=300mA
Current Gain Bandwidth Product
fT
VCE=12V,IC=500mA
Min.
120
100
70
10
Typ. Max. Unit
0.1 mA
0.1 mA
V
220
0.5 V
1.2 V
MHz
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