2SC3831 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

2SC3831

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3831

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0

VCEsat Collector-emitter saturation voltage IC=5A IB=1.0A

VBEsat Base-emitter saturation voltage

IC=5A ;IB=1.0A

ICBO

Collector cut-off current

VCB=600V; IE=0

IEBO

Emitter cut-off current

VEB=10V; IC=0

hFE

DC current gain

IC=5A ; VCE=4V

fT

Transition frequency

IC=1A ; VCE=12V

COB

Output capacitance

f=1MHz ; VCB=10V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=5A; VCC=200V

IB1=0.5A; IB2=-1A

RL=40Ω

MIN TYP. MAX UNIT

500

V

0.5

V

1.3

V

1

mA

0.1

mA

10

30

8

MHz

105

pF

1.0

μs

4.5

μs

0.5

μs

2

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