2SC3834
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
200
V
Collector-emitter voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
8
V
Collector Current (Pulse)
IC
7
A
Base Current
IB
3
A
Collector Dissipation (TC=25°C)
PC
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BVCEO
ICBO
IEBO
hFE
VCE(SAT)
VBE(SAT)
fT
Cob
TEST CONDITIONS
IC= 50mA
VCB=200V, IE=0A
VEB=8V, IC=0A
VCE=4V, IC=3A
IC=3A, IB=0.3mA
IC=3A, IB=0.3mA
IE=-0.5mA, VCE=12V, f=100MHz
VCB=10 V, IE=0A, f=1MHz
MIN TYP MAX UNIT
120
V
100 μA
100 μA
70
220
0.5 V
1.2 V
30
MHz
110
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-026.C