2SC3756 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC3756 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=1A
VBEsat Base-emitter saturation voltage
IC=4A ;IB=1A
ICBO
Collector cut-off current
ICES
Collector cut-off current
IEBO
Emitter cut-off current
VCB=800V ;IE=0
VCE=1500V; RBE=0
VEB=4V ;IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
Product Specification
2SC3756
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10
μA
1.0
mA
10
μA
8
36
4
2
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