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C3449

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3449

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1m A; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.6A

VBE(sat) Base-Emitter Saturation Voltage

IC= 3A; IB=B 0.6A

ICBO

Collector Cutoff Current

VCB= 500V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 0.6A; VCE= 5V

hFE-2

DC Current Gain

IC= 3A; VCE= 5V

fT

Current-Gain—Bandwidth Product

IC= 0.6A; VCE= 10V

COB

Output Capacitance

Switching Times

IE= 0; VCB= 10V; ftest= 1.0MHz

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= 4A, IB1= 0.8A; IB2= -1.6A

RL= 50Ω; VCC= 200V

‹ hFE-1 Classifications

L

M

N

15-30 20-40 30-50

MIN TYP. MAX UNIT

800

V

500

V

7

V

1.0

V

1.5

V

10 μA

10 μA

15

50

8

18

MHz

80

pF

0.5 μs

3.0 μs

0.3 μs

isc Website：www.iscsemi.cn

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