2SC3486 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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2SC3486

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=5mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=5mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=1.2A

VBEsat Base-emitter saturation voltage

IC=5A; IB=1.2A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=10V

Switching times

tstg

Storage time

tf

Fall time

IC=5A;RL=40Ω

IB1=1A; IB2=-2A

Product Specification

2SC3486

MIN TYP. MAX UNIT

800

V

1500

V

7

V

5.0

V

1.5

V

10

μA

1

mA

8

3

MHz

3.0 μs

0.3 μs

2

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