DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SC3295-A(2007) Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
Fabricante
2SC3295-A Datasheet PDF : 4 Pages
1 2 3 4
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3295
Audio Frequency Amplifier Applications
Switching Applications
2SC3295
Unit: mm
High hFE: hFE = 600~3600
High voltage: VCEO = 50 V
High collector current: IC = 150 mA (max)
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
50
V
50
V
5
V
150
mA
30
mA
150
mW
125
°C
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-236MOD
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
SC-59
2-3F1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.012 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 2 mA
VCE (sat)
fT
Cob
IC = 100 mA, IB = 10 mA
VCE = 10 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
NF (1)
NF (2)
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,
Rg = 10 kΩ
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
Rg = 10 kΩ
Note: hFE classification A: 600~1800, B: 1200~3600
Marking
Min Typ. Max Unit
0.1
μA
0.1
μA
600 3600
0.12 0.25
V
100 250 MHz
3.5
pF
0.5
dB
0.3
1
2007-11-01

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]