SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2 A
VBEsat Base-emitter saturation voltage
IC=1A; IB=0.2 A
ICBO
Collector cut-off current
VCB=400V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=0.1A ; VCE=5V
Product Specification
2SC3235
MIN TYP. MAX UNIT
400
V
500
V
7
V
1.0
V
1.5
V
10
µA
10
µA
20
50
2