C3152 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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Fabricante

C3152

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3152

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=<

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A

VBEsat

Base-emitter saturation voltage

IC=1.5A;IB=0.3A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.2A ; VCE=5V

hFE -2

DC current gain

IC=1A ; VCE=5V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

fT

Transition frequency

IC=0.2A ; VCE=10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=2A;IB1=0.4A;IB2=-0.8A

RL=20E,VCC=400V

hFE-1 classifications

K

L

M

10-20

15-30

20-40

MIN TYP. MAX UNIT

800

V

900

V

7

V

2.0

V

1.5

V

10

µA

10

µA

10

40

8

60

pF

15

MHz

1.0

µs

3.0

µs

0.7

µs

2

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