2SC3060 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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Fabricante

2SC3060

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3060

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=>

V(BR)CBO Collector-base breakdown voltage

IC=1mA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCE(sat) Collector-emitter saturation voltage IC=2A; IB=0.4A

VBE(sat) Base-emitter saturation voltage

IC=2A; IB=0.4A

ICBO

Collector cut-off current

VCB=1000V; IE=0

VCB=1000V; IE=0, TC=100

IEBO

Emitter cut-off current

VEB=6V; IC=0

hFE

DC current gain

IC=2A ; VCE=5V

fT

Transition frequency

IC=0.5A ; VCE=10V

Cob

Output capacitance

IE=0; VCB=10V,f=1MHz

Switching times

tr

Rise time

tstg

Storage time

tf

Fall time

VCC=400V; IC=2A

IB1=0.2A;IB2=-0.6A;

MIN TYP. MAX UNIT

850

V

1200

V

7

V

1.5

V

2.0

V

100

µA

1

mA

100

µA

10

30

15

MHz

120

pF

0.5

µs

3.5

µs

0.3

µs

2

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