2SC3230 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC3230 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCE(sat) Collector-emitter saturation voltage
IC=2A ;IB=0.2 A
VBE
Base-emitter on voltage
IC=0.5A ; VCE=2V
ICBO
Collector cut-off current
VCB=20V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=2V
hFE-2
DC current gain
IC=2.5A ; VCE=2V
COB
Collector output capacitance
IE=0; VCB=10V,f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=2V
hFE-1 Classifications
O
Y
70-140
120-240
Product Specification
2SC3230
MIN TYP. MAX UNIT
30
V
5
V
0.3 0.8
V
0.75 1.0
V
1.0 μA
1.0 μA
70
240
25
35
pF
100
MHz
2
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